Manufacturer: Texas Instruments
Product Category: MOSFETs
RoHS:
REACH - SVHC:
Technology: Si
Mounting Style: SMD/SMT
Package / Case: D2PAK-3 (TO-263-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 200 A
Rds On - Drain-Source Resistance: 2.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
Qg - Gate Charge: 81 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Tradename: NexFET
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 3 ns
Forward Transconductance - Min: 263 S
Height: 4.7 mm
Length: 9.25 mm
Moisture Sensitive: Yes
Product Type: MOSFETs
Rise Time: 3 ns
Series: CSD18535KTT
50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 9 ns
Width: 10.26
Unit Weight: 0.069645 oz